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Found 2278 results for any of the keywords sic wafer. Time 0.010 seconds.
Semiconductor wafer,Single Crystal wafer,wafer substrate-XIAMEN POWERWPAM-XIAMEN produce wide range of Compound Semiconductor Wafer and LED wafer substrate - single crystal wafer: Silicon Carbide Wafer(Substrate), Gallium Nitride Wafer(Substrate), Gallium Nitride HEMT,GaAs Wafer(Substrate)
GaN on SiC (Silicon Carbdie) HEMT Wafer for RF or PowerThe transport performance of heterostructure 2DEG GaN on SiC substrate wafer is better than GaN on Si / sapphire substrate.
Compound Semiconductor Materials: SiC, GaN, III-V Group MaterialCompound semiconductor materials including III-V wafers, SiC, GaN and other semiconductor wafers are offered with low defect density
GaN Wafer Including Substrate, Template Epitaxy WaferGaN (gallium nitride) wafer – wide band gap material provides higher efficiency and power density for gallium nitride chips.
Wafer Supplier of Compound Semiconductor Materials and Epi ServiceGanwafer, as a semiconductor wafer supplier, offers semiconductor substrate and epitaxial wafers of SiC, GaN, III-V group compound and etc.
Ganwafer – One of Semiconductor Wafer Manufacturing CompaniesGanwafer is a top-class enterprise for compound semiconductor material integrating semiconductor crystal growth, process development, and epitaxy.
Technology for Manufacturing SiC, GaN, III-V Semiconductor WafersTechnology: HVPE, MOCVD, MBE, etc are used by semiconductor wafer fabs to grow SiC wafers, GaN wafers, III-V wafers with low defects and low impurity.
GaN on Sapphire HEMT Wafer with High Power DensityGaN on Sapphire HEMT wafer is epitaxially grown with high-quality, high-uniformity AlGaN / GaN heterostructures for power or RF application.
AlGaN / GaN on Silicon HEMT Wafer with High 2DEG MobilityGaN on silicon substrate wafer is offered with HEMT or template structure used in D-mode / E-mode power or RF application.
Freestanding GaN (Gallium Nitride) Substrate Grown by HVPEFree-standing GaN substrate wafer with low dislocation density, uniform surface and low defect density is for UHB-LED and LD.
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